IXYSパワー半導体製品案内

製品案内

型式	Vces(V)	IC25 Tc=25°C IGBT(A)	IC80 Tc=80°C IGBT(A)	VCE(sat) typTj=25°C IGBT(V)	Eoff typ Tj=125°C IGBT(mJ)	RthJC max IGBT(K/W)	IF25 Tc=25°C Diode(A)	IF80 Tc=80°C Diode(A)	RthJC max Diode(K/W)	内部結線	Ckt Diag	パッケージ	Status
MII75-12A3	1200	90	60	2.2	5.6	0.33	100	60	0.66	Phase Leg	MII...	Y4-M5	Active Part
MII100-12A3	1200	135	90	2.2	10.5	0.22	150	95	0.45	Phase Leg	MII...	Y4-M5	Active Part
MII145-12A3	1200	160	110	2.2	15	0.18	150	95	0.45	Phase Leg	MII...	Y4-M5	Active Part
MII150-12A4	1200	180	120	2.2	11.5	0.17	200	130	0.33	Phase Leg	MII...	Y3-DCB	Active Part
MII200-12A4	1200	270	180	2.2	21	0.11	300	200	0.23	Phase Leg	MII...	Y3-DCB	Active Part
MII300-12A4	1200	330	220	2.2	29	0.09	450	280	0.15	Phase Leg	MII...	Y3-DCB	Active Part